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4H-SiC based ESD protection optimized for high voltage applications with Segment topology
The circuit has effective ESD performance by using Lateral IGBT based Device. Also, the circuit has latch-up immunity as well as small area. The Electrical characteristics of ESD protection circuit are verified by using TLP system and ESD simulator (ESD pulse generator : it can generate the HBM, MM).
KU302H1122 | 2021-12-01
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4H-SiC based ESD protection optimized for high voltage applications with adjustable N+ region
The circuit has effective ESD performance by using Lateral IGBT based Device. Also, the circuit has latch-up immunity as well as small area. The Electrical characteristics of ESD protection circuit are verified by using TLP system and ESD simulator (ESD pulse generator : it can generate the HBM, MM).
KU302H1121 | 2021-12-01
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4H-SiC based ESD protection optimized for high voltage applications with adjustable gate length
The circuit has effective ESD performance by using Lateral IGBT based Device. Also, the circuit has latch-up immunity as well as small area. The Electrical characteristics of ESD protection circuit are verified by using TLP system and ESD simulator (ESD pulse generator : it can generate the HBM, MM).
KU302H1120 | 2021-11-30
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8Ch 10Bit GPADC
This IP is the GPADC for TSMC 130nm MSRF G process.
The operating temperature is -40 to 125 degrees. The resolution of ADC is 10Bit.
The input supports 8 channels, with a maximum conversion rate of 10 MS/s.
DNL and INL are less than ± 1 LSB and turn-on time is less than 10us.
KC639H1115 | 2021-11-26
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1.2V POR
Power-On Reset (POR) 1.2V IP provides a fixed-width reset pulse to initialize the chip after supply power (1.2V).
When the supply power is applied to 1V, the reset signal is output. Hysteresis of threshold voltage is 50mV, and assertion delay is 20us.
POR 3.3V IP has low power operation characteristics of 2uA.
KC639H1114 | 2021-11-26